Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQPF11N50CF
Manufacturer Part Number | FQPF11N50CF |
---|---|
Future Part Number | FT-FQPF11N50CF |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | FRFET® |
FQPF11N50CF Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 550 mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 2055pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 48W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F |
Package / Case | TO-220-3 Full Pack |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQPF11N50CF Weight | Contact Us |
Replacement Part Number | FQPF11N50CF-FT |
GP1M018A020HG
Global Power Technologies Group
GP2M002A060HG
Global Power Technologies Group
GP2M002A065HG
Global Power Technologies Group
GP2M004A060HG
Global Power Technologies Group
GP2M004A065HG
Global Power Technologies Group
GP2M005A050HG
Global Power Technologies Group
GP2M005A060HG
Global Power Technologies Group
GP2M007A065HG
Global Power Technologies Group
GP2M008A060HG
Global Power Technologies Group
GP2M010A060H
Global Power Technologies Group
A1010B-2VQ80I
Microsemi Corporation
EPF10K30ATC144-1
Intel
XC3S500E-4PQ208I
Xilinx Inc.
AFS090-2FG256I
Microsemi Corporation
AGL1000V5-FGG256I
Microsemi Corporation
LCMXO3L-4300C-5BG324I
Lattice Semiconductor Corporation
EP2C20F484C6
Intel
10AX022E3F29I2LG
Intel
5CGXBC9A7U19C8N
Intel
EP4CE75F29C8
Intel