Manufacturer Part Number | FQP9N08 |
---|---|
Future Part Number | FT-FQP9N08 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | QFET® |
FQP9N08 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 210 mOhm @ 4.65A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 10V |
Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 40W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQP9N08 Weight | Contact Us |
Replacement Part Number | FQP9N08-FT |
FDP79N15
ON Semiconductor
FDP80N06
ON Semiconductor
FDP8441_F085
ON Semiconductor
FDP8442
ON Semiconductor
FDP8442-F085
ON Semiconductor
FDP8443
ON Semiconductor
FDP86363-F085
ON Semiconductor
FDP8870-F085
ON Semiconductor
FDP8876
ON Semiconductor
FDP8878
ON Semiconductor
XCV1000E-8FG900C
Xilinx Inc.
LCMXO640C-4FTN256I
Lattice Semiconductor Corporation
LCMXO3L-9400C-5BG484I
Lattice Semiconductor Corporation
M1AGL250V2-VQ100
Microsemi Corporation
M1AGL250V5-VQG100
Microsemi Corporation
EP2S60F484C5
Intel
5SGXMA7K3F40C3
Intel
XC4020E-2HQ208I
Xilinx Inc.
5AGXMA7G4F35I5N
Intel
EPF8820QC160-4
Intel