Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQI11P06TU
Manufacturer Part Number | FQI11P06TU |
---|---|
Future Part Number | FT-FQI11P06TU |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | QFET® |
FQI11P06TU Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 11.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 175 mOhm @ 5.7A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 3.13W (Ta), 53W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK (TO-262) |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQI11P06TU Weight | Contact Us |
Replacement Part Number | FQI11P06TU-FT |
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