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ON Semiconductor FQI10N60CTU

MFG Part Number
FQI10N60CTU
Available Quantity
14110 Pieces
Reference Price
USD 0
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
ON Semiconductor
Brief Description
QFET® MOSFET N-CH 600V 9.5A I2PAK
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
FQI10N60CTU.pdf
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FQI10N60CTU Specifications

Manufacturer Part Number FQI10N60CTU
Future Part Number FT-FQI10N60CTU
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series QFET®
FQI10N60CTU Status (Lifecycle) In Stock
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 730 mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2040pF @ 25V
FET Feature -
Power Dissipation (Max) 3.13W (Ta), 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
FQI10N60CTU Weight Contact Us
Replacement Part Number FQI10N60CTU-FT

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