Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQI10N60CTU
Manufacturer Part Number | FQI10N60CTU |
---|---|
Future Part Number | FT-FQI10N60CTU |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | QFET® |
FQI10N60CTU Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 730 mOhm @ 4.75A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 57nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 2040pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 3.13W (Ta), 156W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK (TO-262) |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQI10N60CTU Weight | Contact Us |
Replacement Part Number | FQI10N60CTU-FT |
BSS225H6327FTSA1
Infineon Technologies
BSS606NH6327XTSA1
Infineon Technologies
BSS192PE6327
Infineon Technologies
BSS192PE6327T
Infineon Technologies
BSS192PH6327XTSA1
Infineon Technologies
BSS192PL6327HTSA1
Infineon Technologies
BSS225
Infineon Technologies
BSS225H6327XTSA1
Infineon Technologies
BSS225L6327HTSA1
Infineon Technologies
BSS87 E6433
Infineon Technologies