Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQH18N50V2
Manufacturer Part Number | FQH18N50V2 |
---|---|
Future Part Number | FT-FQH18N50V2 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | QFET® |
FQH18N50V2 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 265 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 3290pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 277W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQH18N50V2 Weight | Contact Us |
Replacement Part Number | FQH18N50V2-FT |
GP1M013A050FH
Global Power Technologies Group
GP1M015A050FH
Global Power Technologies Group
GP1M016A025FG
Global Power Technologies Group
GP1M016A060F
Global Power Technologies Group
GP1M016A060FH
Global Power Technologies Group
GP1M018A020FG
Global Power Technologies Group
GP2M002A060FG
Global Power Technologies Group
GP2M002A065FG
Global Power Technologies Group
GP2M004A060FG
Global Power Technologies Group
GP2M004A065FG
Global Power Technologies Group
LCMXO2-640HC-4SG48C
Lattice Semiconductor Corporation
A54SX32A-1TQG144
Microsemi Corporation
XC6SLX75T-4FGG484C
Xilinx Inc.
A3P600L-1FGG484
Microsemi Corporation
MPF300T-FCG1152E
Microsemi Corporation
A40MX04-FPL68
Microsemi Corporation
AGLN250V5-VQ100I
Microsemi Corporation
5SGXMA7N2F45C3N
Intel
LFXP6E-3Q208C
Lattice Semiconductor Corporation
5SGSMD4H3F35C4N
Intel