Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQH140N10
Manufacturer Part Number | FQH140N10 |
---|---|
Future Part Number | FT-FQH140N10 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | QFET® |
FQH140N10 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 140A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 10 mOhm @ 70A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 285nC @ 10V |
Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 7900pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 375W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQH140N10 Weight | Contact Us |
Replacement Part Number | FQH140N10-FT |
GP1M012A060FH
Global Power Technologies Group
GP1M013A050FH
Global Power Technologies Group
GP1M015A050FH
Global Power Technologies Group
GP1M016A025FG
Global Power Technologies Group
GP1M016A060F
Global Power Technologies Group
GP1M016A060FH
Global Power Technologies Group
GP1M018A020FG
Global Power Technologies Group
GP2M002A060FG
Global Power Technologies Group
GP2M002A065FG
Global Power Technologies Group
GP2M004A060FG
Global Power Technologies Group
XC2V250-5FG256I
Xilinx Inc.
M2GL050-FGG484I
Microsemi Corporation
A3P1000-FGG484T
Microsemi Corporation
APA1000-PQ208M
Microsemi Corporation
LCMXO3L-9400C-6BG484C
Lattice Semiconductor Corporation
5SGXEA5K3F35C2L
Intel
XC5VLX50-2FFG1153C
Xilinx Inc.
XC6VLX550T-2FFG1759C
Xilinx Inc.
XCKU035-L1SFVA784I
Xilinx Inc.
5SGXMA3H1F35C2LN
Intel