Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQD8P10TM-F085
Manufacturer Part Number | FQD8P10TM-F085 |
---|---|
Future Part Number | FT-FQD8P10TM-F085 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
FQD8P10TM-F085 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 6.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 530 mOhm @ 3.3A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 470pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 44W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQD8P10TM-F085 Weight | Contact Us |
Replacement Part Number | FQD8P10TM-F085-FT |
IRLR7807ZTRPBF
Infineon Technologies
TK55S10N1,LQ
Toshiba Semiconductor and Storage
TK65S04N1L,LQ
Toshiba Semiconductor and Storage
TK7S10N1Z,LQ
Toshiba Semiconductor and Storage
TK90S06N1L,LQ
Toshiba Semiconductor and Storage
IRLR2905ZPBF
Infineon Technologies
AUIRFR5410
Infineon Technologies
IXFY26N30X3
IXYS
IXTY1R6N100D2
IXYS
IXTY1R6N50D2
IXYS
AT6010ALV-4AC
Microchip Technology
EX64-TQ100I
Microsemi Corporation
XC4005XL-3VQ100I
Xilinx Inc.
M1A3P600L-1FGG484I
Microsemi Corporation
LFE5UM-85F-7BG756I
Lattice Semiconductor Corporation
EP20K200EFC484-2XN
Intel
5SGXEA5K3F40I3LN
Intel
EP4CE6E22C8N
Intel
LFEC6E-5F484C
Lattice Semiconductor Corporation
5SGXEA3H2F35I3LN
Intel