Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQB9N08TM
Manufacturer Part Number | FQB9N08TM |
---|---|
Future Part Number | FT-FQB9N08TM |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | QFET® |
FQB9N08TM Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 210 mOhm @ 4.65A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 10V |
Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 3.75W (Ta), 40W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQB9N08TM Weight | Contact Us |
Replacement Part Number | FQB9N08TM-FT |
FQB10N20TM
ON Semiconductor
FQB10N60CTM
ON Semiconductor
FQB11N40TM
ON Semiconductor
FQB12N50TM_AM002
ON Semiconductor
FQB12N60CTM
ON Semiconductor
FQB12N60TM_AM002
ON Semiconductor
FQB12P10TM
ON Semiconductor
FQB13N06LTM
ON Semiconductor
FQB13N06TM
ON Semiconductor
FQB13N10LTM
ON Semiconductor
A1020B-VQG80I
Microsemi Corporation
XC6VLX75T-L1FFG484I
Xilinx Inc.
APA1000-BG456M
Microsemi Corporation
AGLN125V2-VQ100I
Microsemi Corporation
EP4CE75F23C8L
Intel
XC5VLX50-3FF676C
Xilinx Inc.
AGL060V2-CS121
Microsemi Corporation
EP20K400ERC240-1
Intel
EPF10K10QI208-4
Intel
EPF10K30AQC208-3N
Intel