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ON Semiconductor FQB4N80TM

MFG Part Number
FQB4N80TM
Available Quantity
98150 Pieces
Reference Price
USD 0.726752
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
ON Semiconductor
Brief Description
QFET® MOSFET N-CH 800V 3.9A D2PAK
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
FQB4N80TM.pdf
FQB4N80TM Image

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FQB4N80TM Specifications

Manufacturer Part Number FQB4N80TM
Future Part Number FT-FQB4N80TM
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series QFET®
FQB4N80TM Status (Lifecycle) In Stock
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.6 Ohm @ 1.95A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 25V
FET Feature -
Power Dissipation (Max) 3.13W (Ta), 130W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
FQB4N80TM Weight Contact Us
Replacement Part Number FQB4N80TM-FT

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