Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQA7N90_F109
Manufacturer Part Number | FQA7N90_F109 |
---|---|
Future Part Number | FT-FQA7N90_F109 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | QFET® |
FQA7N90_F109 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.55 Ohm @ 3.7A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 59nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 2280pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 198W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P |
Package / Case | TO-3P-3, SC-65-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQA7N90_F109 Weight | Contact Us |
Replacement Part Number | FQA7N90_F109-FT |
FQA90N08
ON Semiconductor
FDA28N50F
ON Semiconductor
FDA59N25
ON Semiconductor
FQA40N25
ON Semiconductor
FQA70N15
ON Semiconductor
FQA24N60
ON Semiconductor
FQA30N40
ON Semiconductor
FDA24N50F
ON Semiconductor
FQA19N60
ON Semiconductor
TK62J60W,S1VQ
Toshiba Semiconductor and Storage
LFXP3C-4T144I
Lattice Semiconductor Corporation
A54SX16-VQ100
Microsemi Corporation
EP4CE40F23C6N
Intel
10AX016C4U19I3SG
Intel
5SGSED6K2F40C2N
Intel
5CGXFC7B6M15I7N
Intel
EP4SGX530KH40C3NES
Intel
5SGXEA5K1F35I2N
Intel
XC6VLX365T-1FF1156I
Xilinx Inc.
LCMXO2-7000HE-6BG332C
Lattice Semiconductor Corporation