Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQA160N08
Manufacturer Part Number | FQA160N08 |
---|---|
Future Part Number | FT-FQA160N08 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | QFET® |
FQA160N08 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 7 mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 290nC @ 10V |
Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 7900pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 375W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PN |
Package / Case | TO-3P-3, SC-65-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQA160N08 Weight | Contact Us |
Replacement Part Number | FQA160N08-FT |
RJK5030DPD-00#J2
Renesas Electronics America
RJK5031DPD-00#J2
Renesas Electronics America
RJK6002DPD-00#J2
Renesas Electronics America
RJK6006DPD-00#J2
Renesas Electronics America
RJK6024DPD-00#J2
Renesas Electronics America
RJK6025DPD-00#J2
Renesas Electronics America
RJK6032DPD-00#J2
Renesas Electronics America
RJK0354DSP-00#J0
Renesas Electronics America
RJK0349DSP-00#J0
Renesas Electronics America
RJK0355DSP-00#J0
Renesas Electronics America
A3P1000L-FG484
Microsemi Corporation
M1A3P600L-FGG484
Microsemi Corporation
A54SX32A-CQ256B
Microsemi Corporation
5SEEBF45C3N
Intel
5SGXEABN2F45I2N
Intel
XC6SLX45-N3CSG324C
Xilinx Inc.
XC6SLX45T-N3CSG324C
Xilinx Inc.
LFE2M20SE-7F484C
Lattice Semiconductor Corporation
10AX090N4F40I3LG
Intel
EP2C20Q240C8N
Intel