Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / FP35R12KT4B11BOSA1
Manufacturer Part Number | FP35R12KT4B11BOSA1 |
---|---|
Future Part Number | FT-FP35R12KT4B11BOSA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
FP35R12KT4B11BOSA1 Status (Lifecycle) | In Stock |
Part Status | Active |
IGBT Type | Trench Field Stop |
Configuration | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 35A |
Power - Max | 210W |
Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 35A |
Current - Collector Cutoff (Max) | 1mA |
Input Capacitance (Cies) @ Vce | 2nF @ 25V |
Input | Standard |
NTC Thermistor | Yes |
Operating Temperature | -40°C ~ 150°C |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FP35R12KT4B11BOSA1 Weight | Contact Us |
Replacement Part Number | FP35R12KT4B11BOSA1-FT |
GHIS060A060S-A1
Global Power Technologies Group
GHIS080A060S-A2
Global Power Technologies Group
GHIS030A120S-A2
Global Power Technologies Group
GHIS040A060S-A2
Global Power Technologies Group
GHIS060A060S-A2
Global Power Technologies Group
GHIS060A120S-A2
Global Power Technologies Group
GHIS080A120S-A1
Global Power Technologies Group
GHIS080A120S-A2
Global Power Technologies Group
GHIS030A120S-A1
Global Power Technologies Group
GSID100A120S5C1
Global Power Technologies Group
XC4005E-3PQ100I
Xilinx Inc.
XC2V250-6FGG456C
Xilinx Inc.
AGLN250V2-ZCSG81
Microsemi Corporation
M1A3PE3000-PQG208I
Microsemi Corporation
10AX016C4U19E3LG
Intel
10M50DAF484I6G
Intel
EP4CE22F17C8
Intel
LCMXO640E-3BN256I
Lattice Semiconductor Corporation
EP2AGX190EF29I5G
Intel
EP4SGX110FF35C4
Intel