Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / FJP13007H2TU-F080
Manufacturer Part Number | FJP13007H2TU-F080 |
---|---|
Future Part Number | FT-FJP13007H2TU-F080 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
FJP13007H2TU-F080 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 8A |
Voltage - Collector Emitter Breakdown (Max) | 400V |
Vce Saturation (Max) @ Ib, Ic | 3V @ 2A, 8A |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 2A, 5V |
Power - Max | 80W |
Frequency - Transition | 4MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FJP13007H2TU-F080 Weight | Contact Us |
Replacement Part Number | FJP13007H2TU-F080-FT |
BUK9Y11-30B/C1,115
NXP USA Inc.
BUK9Y12-40E/GFX
NXP USA Inc.
BUK9Y25-60E/GFX
NXP USA Inc.
BUK9Y29-40E/CX
NXP USA Inc.
BUK9Y30-75B/C1,115
NXP USA Inc.
BUK9Y3R0-40E/CX
NXP USA Inc.
BUK9Y3R0-40E/GFX
NXP USA Inc.
BUK9Y41-80E/GFX
NXP USA Inc.
BUK9Y43-60E/GFX
NXP USA Inc.
BUK9Y59-60E/GFX
NXP USA Inc.
XC6SLX9-3TQG144C
Xilinx Inc.
LCMXO2-2000HC-6TG144I
Lattice Semiconductor Corporation
A1020B-2PQG100I
Microsemi Corporation
XC2VP40-6FG676I
Xilinx Inc.
XC4003E-4VQ100I
Xilinx Inc.
M1AFS1500-FGG484I
Microsemi Corporation
5CGXFC5C7F27C8N
Intel
10AX048E3F29E2LG
Intel
5SGXEA7H1F35C2N
Intel
10AX115N3F40I2LG
Intel