Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / FJNS4208RBU
Manufacturer Part Number | FJNS4208RBU |
---|---|
Future Part Number | FT-FJNS4208RBU |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
FJNS4208RBU Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 300mW |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 Short Body |
Supplier Device Package | TO-92S |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FJNS4208RBU Weight | Contact Us |
Replacement Part Number | FJNS4208RBU-FT |
PDTB114ETR
Nexperia USA Inc.
PDTB143ETR
Nexperia USA Inc.
PDTB143XTR
Nexperia USA Inc.
PDTC123ET,215
Nexperia USA Inc.
PDTC144WT,215
Nexperia USA Inc.
PDTD123ET,215
Nexperia USA Inc.
PDTD143ETR
Nexperia USA Inc.
PDTD143XTR
Nexperia USA Inc.
PDTA114TT,215
Nexperia USA Inc.
PDTD123TT,215
Nexperia USA Inc.
AGLN020V2-CSG81I
Microsemi Corporation
A54SX32A-1FGG256
Microsemi Corporation
LFE5UM-85F-7BG554I
Lattice Semiconductor Corporation
EP1K100FC256-2N
Intel
5SGXMBBR3H43I3LN
Intel
5SGXEA5H2F35I3L
Intel
XA7A50T-1CPG236Q
Xilinx Inc.
LFXP2-17E-5FTN256I
Lattice Semiconductor Corporation
LFEC3E-4QN208I
Lattice Semiconductor Corporation
EP2SGX30DF780C5
Intel