Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / FJNS4201RTA
Manufacturer Part Number | FJNS4201RTA |
---|---|
Future Part Number | FT-FJNS4201RTA |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
FJNS4201RTA Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 300mW |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 Short Body |
Supplier Device Package | TO-92S |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FJNS4201RTA Weight | Contact Us |
Replacement Part Number | FJNS4201RTA-FT |
FJNS3207RBU
ON Semiconductor
FJNS3208RBU
ON Semiconductor
FJNS3209RBU
ON Semiconductor
FJNS3210RBU
ON Semiconductor
FJNS3211RBU
ON Semiconductor
FJNS3212RBU
ON Semiconductor
FJNS3213RBU
ON Semiconductor
FJNS3214RBU
ON Semiconductor
FJNS4201RBU
ON Semiconductor
FJNS4202RBU
ON Semiconductor
AGL400V5-FG256I
Microsemi Corporation
M2GL005-1VFG256I
Microsemi Corporation
ICE40LM1K-SWG25TR
Lattice Semiconductor Corporation
A3PN250-VQ100
Microsemi Corporation
EP4CGX150DF27C7N
Intel
5SGXEA4K1F40C1N
Intel
LFE2-12E-6F256C
Lattice Semiconductor Corporation
LFE2-20E-6F484I
Lattice Semiconductor Corporation
10AX115R3F40E2LG
Intel
EP2AGX45DF29I3N
Intel