Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FJ4B01100L1
Manufacturer Part Number | FJ4B01100L1 |
---|---|
Future Part Number | FT-FJ4B01100L1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
FJ4B01100L1 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 74 mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1.2mA |
Gate Charge (Qg) (Max) @ Vgs | 7nC @ 4.5V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 459pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 360mW (Ta) |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Supplier Device Package | XLGA004-W-0808-RA01 |
Package / Case | 4-XFLGA, CSP |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FJ4B01100L1 Weight | Contact Us |
Replacement Part Number | FJ4B01100L1-FT |
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