Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FDV302P-NB8V001
Manufacturer Part Number | FDV302P-NB8V001 |
---|---|
Future Part Number | FT-FDV302P-NB8V001 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
FDV302P-NB8V001 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 120mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
Rds On (Max) @ Id, Vgs | 10 Ohm @ 200mA, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.31nC @ 4.5V |
Vgs (Max) | -8V |
Input Capacitance (Ciss) (Max) @ Vds | 11pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 350mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDV302P-NB8V001 Weight | Contact Us |
Replacement Part Number | FDV302P-NB8V001-FT |
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