Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FDP2D3N10C
Manufacturer Part Number | FDP2D3N10C |
---|---|
Future Part Number | FT-FDP2D3N10C |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | PowerTrench® |
FDP2D3N10C Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 222A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.3 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 4V @ 700µA |
Gate Charge (Qg) (Max) @ Vgs | 152nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 11180pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 214W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDP2D3N10C Weight | Contact Us |
Replacement Part Number | FDP2D3N10C-FT |
IXFH80N65X2-4
IXYS
IXFK32N100X
IXYS
IXFK52N100X
IXYS
IXFN52N100X
IXYS
IXFN70N100X
IXYS
IXFT150N17T2
IXYS
IXFT26N100XHV
IXYS
IXFT32N100XHV
IXYS
IXFT60N65X2HV
IXYS
IXFT80N65X2HV
IXYS
XCV200-5FG256I
Xilinx Inc.
APA150-FGG256
Microsemi Corporation
M7A3P1000-FGG256I
Microsemi Corporation
A40MX04-1PL68
Microsemi Corporation
EP1M350F780C6
Intel
LCMXO2-2000HE-6FTG256C
Lattice Semiconductor Corporation
LFXP2-40E-6FN484I
Lattice Semiconductor Corporation
10AX066H1F34I1SG
Intel
EP1C6Q240C7N
Intel
EP1K100QC208-1GZ
Intel