Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FDN86246
Manufacturer Part Number | FDN86246 |
---|---|
Future Part Number | FT-FDN86246 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | PowerTrench® |
FDN86246 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 261 mOhm @ 1.6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 225pF @ 75V |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SuperSOT-3 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDN86246 Weight | Contact Us |
Replacement Part Number | FDN86246-FT |
SI2356DS-T1-GE3
Vishay Siliconix
SQ2318AES-T1_GE3
Vishay Siliconix
SI2308BDS-T1-E3
Vishay Siliconix
TP0610K-T1-GE3
Vishay Siliconix
SI2372DS-T1-GE3
Vishay Siliconix
SI2308BDS-T1-GE3
Vishay Siliconix
SI2325DS-T1-E3
Vishay Siliconix
BSS139H6327XTSA1
Infineon Technologies
SI2312CDS-T1-GE3
Vishay Siliconix
SI2333CDS-T1-E3
Vishay Siliconix
A3PE600-1FG256I
Microsemi Corporation
A3P1000-2PQ208
Microsemi Corporation
ICE65L04F-LCB132C
Lattice Semiconductor Corporation
ICE40LP640-SWG16TR50
Lattice Semiconductor Corporation
A40MX02-PLG68M
Microsemi Corporation
A42MX16-2TQG176
Microsemi Corporation
LFE3-70E-6FN1156C
Lattice Semiconductor Corporation
AT40K20-2AJC
Microchip Technology
EP3CLS200F780I7
Intel
EPF6016AFC100-3N
Intel