Manufacturer Part Number | FDN8601 |
---|---|
Future Part Number | FT-FDN8601 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | PowerTrench® |
FDN8601 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 109 mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SuperSOT-3 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDN8601 Weight | Contact Us |
Replacement Part Number | FDN8601-FT |
SI2369DS-T1-GE3
Vishay Siliconix
SQ2389ES-T1_GE3
Vishay Siliconix
2N7002KA-TP
Micro Commercial Co
2SK1828TE85LF
Toshiba Semiconductor and Storage
SI2301A-TP
Micro Commercial Co
SI2302CDS-T1-GE3
Vishay Siliconix
SI2324A-TP
Micro Commercial Co
SI2328DS-T1-GE3
Vishay Siliconix
SQ2319ADS-T1_GE3
Vishay Siliconix
2N7002H6327XTSA2
Infineon Technologies