Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FDH047AN08A0
Manufacturer Part Number | FDH047AN08A0 |
---|---|
Future Part Number | FT-FDH047AN08A0 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | PowerTrench® |
FDH047AN08A0 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 4.7 mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 138nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 6600pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 310W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDH047AN08A0 Weight | Contact Us |
Replacement Part Number | FDH047AN08A0-FT |
GP1M006A065F
Global Power Technologies Group
GP1M006A065FH
Global Power Technologies Group
GP1M006A070F
Global Power Technologies Group
GP1M006A070FH
Global Power Technologies Group
GP1M007A090FH
Global Power Technologies Group
GP1M008A025FG
Global Power Technologies Group
GP1M008A050FG
Global Power Technologies Group
GP1M008A080FH
Global Power Technologies Group
GP1M009A020FG
Global Power Technologies Group
GP1M009A050FSH
Global Power Technologies Group
ICE40UL640-SWG16ITR50
Lattice Semiconductor Corporation
A54SX16P-VQ100M
Microsemi Corporation
AT40K05AL-1DQC
Microchip Technology
5SGXEA9N2F45I2N
Intel
ICE40LP640-CM36
Lattice Semiconductor Corporation
LFXP2-8E-5FTN256C
Lattice Semiconductor Corporation
LCMXO256E-3M100I
Lattice Semiconductor Corporation
LCMXO1200E-3MN132I
Lattice Semiconductor Corporation
EP3SL110F780C3N
Intel
EP3SL110F780I4
Intel