Manufacturer Part Number | FDD5810 |
---|---|
Future Part Number | FT-FDD5810 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
FDD5810 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 7.4A (Ta), 37A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Rds On (Max) @ Id, Vgs | 22 mOhm @ 32A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1890pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 72W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-PAK (TO-252) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDD5810 Weight | Contact Us |
Replacement Part Number | FDD5810-FT |
AUIRFR1018E
Infineon Technologies
AUIRFR120Z
Infineon Technologies
AUIRFR120ZTRL
Infineon Technologies
AUIRFR2307Z
Infineon Technologies
AUIRFR2405
Infineon Technologies
AUIRFR2407
Infineon Technologies
AUIRFR2407TRL
Infineon Technologies
AUIRFR2607Z
Infineon Technologies
AUIRFR2607ZTRL
Infineon Technologies
AUIRFR2905Z
Infineon Technologies
A3PE600-2FGG484I
Microsemi Corporation
M1A3P600-2PQ208
Microsemi Corporation
LFE3-35EA-8LFTN256C
Lattice Semiconductor Corporation
AGLN060V5-ZVQ100
Microsemi Corporation
10M25DAF256C7G
Intel
EP3SE260F1152I3
Intel
LCMXO640C-4M100C
Lattice Semiconductor Corporation
EP3SE110F780C2
Intel
10AX048E2F29I1HG
Intel
EP20K60EQC208-1
Intel