Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FDD3N50NZTM
Manufacturer Part Number | FDD3N50NZTM |
---|---|
Future Part Number | FT-FDD3N50NZTM |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | UniFET-II™ |
FDD3N50NZTM Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 1.25A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 40W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDD3N50NZTM Weight | Contact Us |
Replacement Part Number | FDD3N50NZTM-FT |
FDD4685
ON Semiconductor
FDD5N60NZTM
ON Semiconductor
FDD7N60NZTM
ON Semiconductor
FDD9411L-F085
ON Semiconductor
FQD1N80TM
ON Semiconductor
IRFR4105TRPBF
Infineon Technologies
IRLR3636TRPBF
Infineon Technologies
TK33S10N1Z,LQ
Toshiba Semiconductor and Storage
FDD8870
ON Semiconductor
IRFR5410TRPBF
Infineon Technologies