Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / FDC6301N_G
Manufacturer Part Number | FDC6301N_G |
---|---|
Future Part Number | FT-FDC6301N_G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
FDC6301N_G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 220mA |
Rds On (Max) @ Id, Vgs | 4 Ohm @ 400mA, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 10V |
Power - Max | 700mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | SuperSOT™-6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDC6301N_G Weight | Contact Us |
Replacement Part Number | FDC6301N_G-FT |
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