Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FCPF380N60-F152
Manufacturer Part Number | FCPF380N60-F152 |
---|---|
Future Part Number | FT-FCPF380N60-F152 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | SuperFET® II |
FCPF380N60-F152 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 10.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1665pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 31W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F-3 |
Package / Case | TO-220-3 Full Pack |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FCPF380N60-F152 Weight | Contact Us |
Replacement Part Number | FCPF380N60-F152-FT |
GP2M005A060HG
Global Power Technologies Group
GP2M007A065HG
Global Power Technologies Group
GP2M008A060HG
Global Power Technologies Group
GP2M010A060H
Global Power Technologies Group
GP2M010A065H
Global Power Technologies Group
GP2M012A060H
Global Power Technologies Group
GP2M020A050H
Global Power Technologies Group
GA20JT12-263
GeneSiC Semiconductor
FCH76N60NF
ON Semiconductor
FDH3632
ON Semiconductor
A54SX32-1TQ144M
Microsemi Corporation
LFXP3E-3T100I
Lattice Semiconductor Corporation
A3P400-2FGG256I
Microsemi Corporation
LCMXO2-256HC-4SG32I
Lattice Semiconductor Corporation
LFE5UM-85F-7BG554C
Lattice Semiconductor Corporation
A3P125-1VQG100
Microsemi Corporation
EP2C15AF484C8N
Intel
5SGXEB6R3F40I3L
Intel
XC4036XL-3HQ208C
Xilinx Inc.
XC6SLX45-L1CSG324C
Xilinx Inc.