Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FCH25N60N
Manufacturer Part Number | FCH25N60N |
---|---|
Future Part Number | FT-FCH25N60N |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | SupreMOS™ |
FCH25N60N Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 126 mOhm @ 12.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 74nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 3352pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 216W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FCH25N60N Weight | Contact Us |
Replacement Part Number | FCH25N60N-FT |
GP1M009A020FG
Global Power Technologies Group
GP1M009A050FSH
Global Power Technologies Group
GP1M009A060FH
Global Power Technologies Group
GP1M009A070F
Global Power Technologies Group
GP1M009A090FH
Global Power Technologies Group
GP1M010A060FH
Global Power Technologies Group
GP1M010A080FH
Global Power Technologies Group
GP1M011A050FH
Global Power Technologies Group
GP1M011A050FSH
Global Power Technologies Group
GP1M012A060FH
Global Power Technologies Group
LFEC3E-4T144C
Lattice Semiconductor Corporation
A42MX24-3PQ208
Microsemi Corporation
5SGXMA9N3F45I3N
Intel
XCS40-4BG256C
Xilinx Inc.
XC6SLX16-3CSG324C
Xilinx Inc.
APA750-FGG676I
Microsemi Corporation
LFXP2-8E-6FTN256I
Lattice Semiconductor Corporation
LFX125EB-03F256I
Lattice Semiconductor Corporation
LFEC33E-3FN484C
Lattice Semiconductor Corporation
5CGXFC3B7U15C8N
Intel