Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FCH104N60F-F085
Manufacturer Part Number | FCH104N60F-F085 |
---|---|
Future Part Number | FT-FCH104N60F-F085 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101, SuperFET® II |
FCH104N60F-F085 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 104 mOhm @ 18.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 139nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4302pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 357W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FCH104N60F-F085 Weight | Contact Us |
Replacement Part Number | FCH104N60F-F085-FT |
GP1M010A080N
Global Power Technologies Group
GP1M016A060N
Global Power Technologies Group
GP1M020A050N
Global Power Technologies Group
GP1M020A060M
Global Power Technologies Group
GP1M020A060N
Global Power Technologies Group
GP1M023A050N
Global Power Technologies Group
GP2M009A090NG
Global Power Technologies Group
GP2M011A090NG
Global Power Technologies Group
GP2M012A080NG
Global Power Technologies Group
GP2M020A050N
Global Power Technologies Group
XC2VP4-6FGG256C
Xilinx Inc.
XC4052XL-3HQ304C
Xilinx Inc.
XC2V250-6FGG456C
Xilinx Inc.
M1A3P600-1FGG484
Microsemi Corporation
A42MX36-PQ208I
Microsemi Corporation
M2GL090TS-1FGG676I
Microsemi Corporation
LFEC10E-4QN208I
Lattice Semiconductor Corporation
EP1K100QC208-3N
Intel
EP4SGX180FF35C2XN
Intel
EP1SGX25DF1020C6
Intel