Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FCH077N65F-F085
Manufacturer Part Number | FCH077N65F-F085 |
---|---|
Future Part Number | FT-FCH077N65F-F085 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101, SuperFET® II |
FCH077N65F-F085 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 77 mOhm @ 27A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 164nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 7162pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 481W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FCH077N65F-F085 Weight | Contact Us |
Replacement Part Number | FCH077N65F-F085-FT |
GP1M008A025FG
Global Power Technologies Group
GP1M008A050FG
Global Power Technologies Group
GP1M008A080FH
Global Power Technologies Group
GP1M009A020FG
Global Power Technologies Group
GP1M009A050FSH
Global Power Technologies Group
GP1M009A060FH
Global Power Technologies Group
GP1M009A070F
Global Power Technologies Group
GP1M009A090FH
Global Power Technologies Group
GP1M010A060FH
Global Power Technologies Group
GP1M010A080FH
Global Power Technologies Group
LCMXO256C-4T100I
Lattice Semiconductor Corporation
A54SX32A-FGG484
Microsemi Corporation
XC2V1500-6BGG575C
Xilinx Inc.
XC7K355T-1FFG901I
Xilinx Inc.
XC5VTX150T-1FFG1156I
Xilinx Inc.
LFXP3E-5QN208C
Lattice Semiconductor Corporation
LCMXO2-4000HE-6MG184C
Lattice Semiconductor Corporation
LFE3-95EA-6LFN484C
Lattice Semiconductor Corporation
10AX090N2F45I2SG
Intel
EP2AGX190EF29I5
Intel