Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FCH077N65F-F085
Manufacturer Part Number | FCH077N65F-F085 |
---|---|
Future Part Number | FT-FCH077N65F-F085 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101, SuperFET® II |
FCH077N65F-F085 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 77 mOhm @ 27A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 164nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 7162pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 481W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FCH077N65F-F085 Weight | Contact Us |
Replacement Part Number | FCH077N65F-F085-FT |
GP1M008A025FG
Global Power Technologies Group
GP1M008A050FG
Global Power Technologies Group
GP1M008A080FH
Global Power Technologies Group
GP1M009A020FG
Global Power Technologies Group
GP1M009A050FSH
Global Power Technologies Group
GP1M009A060FH
Global Power Technologies Group
GP1M009A070F
Global Power Technologies Group
GP1M009A090FH
Global Power Technologies Group
GP1M010A060FH
Global Power Technologies Group
GP1M010A080FH
Global Power Technologies Group