Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / ES6U2T2R
Manufacturer Part Number | ES6U2T2R |
---|---|
Future Part Number | FT-ES6U2T2R |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
ES6U2T2R Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 1.8nC @ 4.5V |
Vgs (Max) | ±10V |
Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 10V |
FET Feature | Schottky Diode (Isolated) |
Power Dissipation (Max) | 700mW (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-WEMT |
Package / Case | SOT-563, SOT-666 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
ES6U2T2R Weight | Contact Us |
Replacement Part Number | ES6U2T2R-FT |
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