Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / ES3DVHM6G
Manufacturer Part Number | ES3DVHM6G |
---|---|
Future Part Number | FT-ES3DVHM6G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
ES3DVHM6G Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 200V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 900mV @ 3A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 20ns |
Current - Reverse Leakage @ Vr | 10µA @ 200V |
Capacitance @ Vr, F | 45pF @ 4V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | DO-214AB, SMC |
Supplier Device Package | DO-214AB (SMC) |
Operating Temperature - Junction | -55°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
ES3DVHM6G Weight | Contact Us |
Replacement Part Number | ES3DVHM6G-FT |
ES2AHM4G
Taiwan Semiconductor Corporation
ES2C M4G
Taiwan Semiconductor Corporation
ES2D M4G
Taiwan Semiconductor Corporation
ES2D R5G
Taiwan Semiconductor Corporation
ES2DHR5G
Taiwan Semiconductor Corporation
ES2DV M4G
Taiwan Semiconductor Corporation
ES2DV R5G
Taiwan Semiconductor Corporation
ES2DVHM4G
Taiwan Semiconductor Corporation
ES2DVHR5G
Taiwan Semiconductor Corporation
ES2F R5G
Taiwan Semiconductor Corporation
A54SX16A-1TQ144I
Microsemi Corporation
XC7A75T-3FGG484E
Xilinx Inc.
M1A3P1000L-1FGG484I
Microsemi Corporation
APA1000-CQ352M
Microsemi Corporation
EP2C8F256C8N
Intel
5SGXEBBR1H43C2L
Intel
XC2V2000-4FFG896C
Xilinx Inc.
LCMXO256E-4M100C
Lattice Semiconductor Corporation
EP1S10F780C6
Intel
EP4SGX110HF35I3
Intel