Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / ES1JLHM2G
Manufacturer Part Number | ES1JLHM2G |
---|---|
Future Part Number | FT-ES1JLHM2G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
ES1JLHM2G Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 600V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 1.7V @ 1A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 35ns |
Current - Reverse Leakage @ Vr | 5µA @ 600V |
Capacitance @ Vr, F | 8pF @ 4V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | DO-219AB |
Supplier Device Package | Sub SMA |
Operating Temperature - Junction | -55°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
ES1JLHM2G Weight | Contact Us |
Replacement Part Number | ES1JLHM2G-FT |
SS26L RTG
Taiwan Semiconductor Corporation
SS26L RUG
Taiwan Semiconductor Corporation
SS26LHM2G
Taiwan Semiconductor Corporation
SS26LHMHG
Taiwan Semiconductor Corporation
SS26LHMQG
Taiwan Semiconductor Corporation
SS26LHMTG
Taiwan Semiconductor Corporation
SS26LHRFG
Taiwan Semiconductor Corporation
SS26LHRHG
Taiwan Semiconductor Corporation
SS26LHRTG
Taiwan Semiconductor Corporation
SS26LHRVG
Taiwan Semiconductor Corporation
A1020B-2VQ80C
Microsemi Corporation
LFE3-17EA-6FTN256C
Lattice Semiconductor Corporation
LCMXO640E-5FTN256C
Lattice Semiconductor Corporation
A3PN250-Z2VQG100
Microsemi Corporation
EP2C50F484C6N
Intel
EP4SGX290KF40I4N
Intel
XC6VHX250T-2FFG1154I
Xilinx Inc.
10AX090S4F45E3SG
Intel
10AX115H3F34I2LG
Intel
EP3CLS200F780C8
Intel