Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / EPC2107ENGRT
Manufacturer Part Number | EPC2107ENGRT |
---|---|
Future Part Number | FT-EPC2107ENGRT |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | eGaN® |
EPC2107ENGRT Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
FET Feature | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 1.7A, 500mA |
Rds On (Max) @ Id, Vgs | 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 100µA, 2.5V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs | 0.16nC @ 5V, 0.044nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 16pF @ 50V, 7pF @ 50V |
Power - Max | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 9-VFBGA |
Supplier Device Package | 9-BGA (1.35x1.35) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
EPC2107ENGRT Weight | Contact Us |
Replacement Part Number | EPC2107ENGRT-FT |
IPG15N06S3L-45
Infineon Technologies
IPG16N10S461ATMA1
Infineon Technologies
IPG20N04S408ATMA1
Infineon Technologies
IPG20N04S412ATMA1
Infineon Technologies
IPG20N04S4L07ATMA1
Infineon Technologies
IPG20N04S4L08ATMA1
Infineon Technologies
IPG20N06S2L50ATMA1
Infineon Technologies
IPG20N06S3L-23
Infineon Technologies
IPG20N06S3L-35
Infineon Technologies
IPG20N06S415ATMA1
Infineon Technologies
A54SX72A-PQG208M
Microsemi Corporation
AGLN250V5-ZVQG100I
Microsemi Corporation
5SGXMA3E2H29I2N
Intel
5SGXMB9R2H43C2N
Intel
AX500-FGG676
Microsemi Corporation
LFE2-12E-5F484C
Lattice Semiconductor Corporation
LCMXO2-2000HC-6BG256C
Lattice Semiconductor Corporation
10AX057H4F34E3LG
Intel
EP2AGX125EF29C4
Intel
EP3C40F780C7
Intel