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EPC EPC2105ENG

MFG Part Number
EPC2105ENG
Available Quantity
42990 Pieces
Reference Price
USD 0
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
EPC
Brief Description
eGaN® GAN TRANS 2N-CH 80V BUMPED DIE
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Arrays
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
EPC2105ENG.pdf
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EPC2105ENG Specifications

Manufacturer Part Number EPC2105ENG
Future Part Number FT-EPC2105ENG
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series eGaN®
EPC2105ENG Status (Lifecycle) In Stock
Part Status Discontinued at Future Semiconductor
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 9.5A, 38A
Rds On (Max) @ Id, Vgs 14.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 40V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
EPC2105ENG Weight Contact Us
Replacement Part Number EPC2105ENG-FT

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Request for Quotation - Confirm Price - Order - Payment - Shipment - Done

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