Manufacturer Part Number | EPC2103 |
---|---|
Future Part Number | FT-EPC2103 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | eGaN® |
EPC2103 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 28A |
Rds On (Max) @ Id, Vgs | 5.5 mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 7mA |
Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 40V |
Power - Max | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | Die |
Supplier Device Package | Die |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
EPC2103 Weight | Contact Us |
Replacement Part Number | EPC2103-FT |
IPG20N04S4L08ATMA1
Infineon Technologies
IPG20N06S2L50ATMA1
Infineon Technologies
IPG20N06S3L-23
Infineon Technologies
IPG20N06S3L-35
Infineon Technologies
IPG20N06S415ATMA1
Infineon Technologies
IPG20N06S415ATMA2
Infineon Technologies
IPG20N06S4L11ATMA1
Infineon Technologies
IPG20N06S4L14ATMA1
Infineon Technologies
IPG20N06S4L14ATMA2
Infineon Technologies
IPG20N10S4L22ATMA1
Infineon Technologies
EX256-PTQ100I
Microsemi Corporation
XC3S1000-4FG676C
Xilinx Inc.
XC4VFX100-11FFG1517C
Xilinx Inc.
APA150-FG144I
Microsemi Corporation
ICE5LP1K-SWG36ITR
Lattice Semiconductor Corporation
EP1K100FC484-3
Intel
EP4SGX290FH29C4N
Intel
EP2AGX65DF25C6NES
Intel
5SGXEB6R3F43C2N
Intel
LFE3-150EA-6LFN672C
Lattice Semiconductor Corporation