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EPC EPC2102ENG

MFG Part Number
EPC2102ENG
Available Quantity
47840 Pieces
Reference Price
USD 0
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
EPC
Brief Description
eGaN® GAN TRANS 2N-CH 60V BUMPED DIE
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Arrays
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
EPC2102ENG.pdf
EPC2102ENG Image

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EPC2102ENG Specifications

Manufacturer Part Number EPC2102ENG
Future Part Number FT-EPC2102ENG
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series eGaN®
EPC2102ENG Status (Lifecycle) In Stock
Part Status Discontinued at Future Semiconductor
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 23A
Rds On (Max) @ Id, Vgs 4.4 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 830pF @ 30V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
EPC2102ENG Weight Contact Us
Replacement Part Number EPC2102ENG-FT

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