Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / EPC2102ENGRT
Manufacturer Part Number | EPC2102ENGRT |
---|---|
Future Part Number | FT-EPC2102ENGRT |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | eGaN® |
EPC2102ENGRT Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 23A (Tj) |
Rds On (Max) @ Id, Vgs | 4.4 mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 7mA |
Gate Charge (Qg) (Max) @ Vgs | 6.8nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 30V |
Power - Max | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | Die |
Supplier Device Package | Die |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
EPC2102ENGRT Weight | Contact Us |
Replacement Part Number | EPC2102ENGRT-FT |
IPG20N06S2L50ATMA1
Infineon Technologies
IPG20N06S3L-23
Infineon Technologies
IPG20N06S3L-35
Infineon Technologies
IPG20N06S415ATMA1
Infineon Technologies
IPG20N06S415ATMA2
Infineon Technologies
IPG20N06S4L11ATMA1
Infineon Technologies
IPG20N06S4L14ATMA1
Infineon Technologies
IPG20N06S4L14ATMA2
Infineon Technologies
IPG20N10S4L22ATMA1
Infineon Technologies
IPG20N10S4L35ATMA1
Infineon Technologies
A1425A-VQ100C
Microsemi Corporation
EP3SE260F1517C4L
Intel
5SGXEA9N1F45I2N
Intel
XC7S50-2CSGA324I
Xilinx Inc.
A42MX16-FPQ100
Microsemi Corporation
LFEC6E-3QN208I
Lattice Semiconductor Corporation
LCMXO1200E-5B256C
Lattice Semiconductor Corporation
EP4CE75F29I8LN
Intel
EP1K30QC208-3
Intel
EP4SGX290FF35C3N
Intel