Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / EPC2101ENG
Manufacturer Part Number | EPC2101ENG |
---|---|
Future Part Number | FT-EPC2101ENG |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | eGaN® |
EPC2101ENG Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 9.5A, 38A |
Rds On (Max) @ Id, Vgs | 11.5 mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs | 2.7nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 30V |
Power - Max | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | Die |
Supplier Device Package | Die |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
EPC2101ENG Weight | Contact Us |
Replacement Part Number | EPC2101ENG-FT |
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