Manufacturer Part Number | EPC2016 |
---|---|
Future Part Number | FT-EPC2016 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | eGaN® |
EPC2016 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 11A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 5V |
Vgs (Max) | +6V, -5V |
Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | -40°C ~ 125°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die |
Package / Case | Die |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
EPC2016 Weight | Contact Us |
Replacement Part Number | EPC2016-FT |
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