Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / EPC2016C
Manufacturer Part Number | EPC2016C |
---|---|
Future Part Number | FT-EPC2016C |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | eGaN® |
EPC2016C Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 11A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 5V |
Vgs (Max) | +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds | 420pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die |
Package / Case | Die |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
EPC2016C Weight | Contact Us |
Replacement Part Number | EPC2016C-FT |
FDMC8622
ON Semiconductor
FDMC8878
ON Semiconductor
FDMC5614P
ON Semiconductor
FDMC7672S
ON Semiconductor
FDMS2734
ON Semiconductor
FDMS3572
ON Semiconductor
FDMS2572
ON Semiconductor
FDMS2672
ON Semiconductor
FDMS3672
ON Semiconductor
FDMS5672
ON Semiconductor
XCV200-5FG256I
Xilinx Inc.
APA150-FGG256
Microsemi Corporation
M7A3P1000-FGG256I
Microsemi Corporation
A40MX04-1PL68
Microsemi Corporation
EP1M350F780C6
Intel
LCMXO2-2000HE-6FTG256C
Lattice Semiconductor Corporation
LFXP2-40E-6FN484I
Lattice Semiconductor Corporation
10AX066H1F34I1SG
Intel
EP1C6Q240C7N
Intel
EP1K100QC208-1GZ
Intel