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EPC EPC2016C

MFG Part Number
EPC2016C
Available Quantity
88280 Pieces
Reference Price
USD 0.84
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
EPC
Brief Description
eGaN® GANFET TRANS 100V 18A BUMPED DIE
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
EPC2016C.pdf
EPC2016C Image

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EPC2016C Specifications

Manufacturer Part Number EPC2016C
Future Part Number FT-EPC2016C
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series eGaN®
EPC2016C Status (Lifecycle) In Stock
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 16 mOhm @ 11A, 5V
Vgs(th) (Max) @ Id 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 5V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 50V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
EPC2016C Weight Contact Us
Replacement Part Number EPC2016C-FT

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Request for Quotation - Confirm Price - Order - Payment - Shipment - Done

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