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EPC EPC2012

MFG Part Number
EPC2012
Available Quantity
63880 Pieces
Reference Price
USD 0
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
EPC
Brief Description
eGaN® GANFET TRANS 200V 3A BUMPED DIE
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
EPC2012.pdf
EPC2012 Image

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EPC2012 Specifications

Manufacturer Part Number EPC2012
Future Part Number FT-EPC2012
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series eGaN®
EPC2012 Status (Lifecycle) In Stock
Part Status Discontinued at Future Semiconductor
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 100 mOhm @ 3A, 5V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1.8nC @ 5V
Vgs (Max) +6V, -5V
Input Capacitance (Ciss) (Max) @ Vds 145pF @ 100V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 125°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
EPC2012 Weight Contact Us
Replacement Part Number EPC2012-FT

How To Order?

Request for Quotation - Confirm Price - Order - Payment - Shipment - Done

Shipping Methods

1) DHL (1-3 days)
2) FEDEX (1-3 days)
3) UPS (1-3 days)
4) TNT (2-5 days)
5) EMS (7-10 days)
6) Normal Post (10-20 days)
7) Others
Freight Calculation: Please contact us

How to Contact?

Our Email: [email protected]

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