Manufacturer Part Number | EPC2012 |
---|---|
Future Part Number | FT-EPC2012 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | eGaN® |
EPC2012 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 3A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 1.8nC @ 5V |
Vgs (Max) | +6V, -5V |
Input Capacitance (Ciss) (Max) @ Vds | 145pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | -40°C ~ 125°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die |
Package / Case | Die |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
EPC2012 Weight | Contact Us |
Replacement Part Number | EPC2012-FT |
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