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EPC EPC2010

MFG Part Number
EPC2010
Available Quantity
59260 Pieces
Reference Price
USD 0
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
EPC
Brief Description
eGaN® GANFET TRANS 200V 12A BUMPED DIE
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
EPC2010.pdf
EPC2010 Image

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EPC2010 Specifications

Manufacturer Part Number EPC2010
Future Part Number FT-EPC2010
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series eGaN®
EPC2010 Status (Lifecycle) In Stock
Part Status Discontinued at Future Semiconductor
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 25 mOhm @ 6A, 5V
Vgs(th) (Max) @ Id 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 5V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 100V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 125°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
EPC2010 Weight Contact Us
Replacement Part Number EPC2010-FT

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Request for Quotation - Confirm Price - Order - Payment - Shipment - Done

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Our Email: [email protected]

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