Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / EMZ51T2R
Manufacturer Part Number | EMZ51T2R |
---|---|
Future Part Number | FT-EMZ51T2R |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
EMZ51T2R Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN, PNP |
Current - Collector (Ic) (Max) | 200mA |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
Power - Max | 150mW |
Frequency - Transition | 400MHz, 350MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | EMT6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMZ51T2R Weight | Contact Us |
Replacement Part Number | EMZ51T2R-FT |
HN4B04J(TE85L,F)
Toshiba Semiconductor and Storage
2SA1618-Y(TE85L,F)
Toshiba Semiconductor and Storage
HN4A51JTE85LF
Toshiba Semiconductor and Storage
HN4C51J(TE85L,F)
Toshiba Semiconductor and Storage
2SC4207-Y(TE85L,F)
Toshiba Semiconductor and Storage
2SA1618-GR(TE85L,F
Toshiba Semiconductor and Storage
HN4A06J(TE85L,F)
Toshiba Semiconductor and Storage
HN1B04FU-GR,LF
Toshiba Semiconductor and Storage
HN1B04FU-Y,LF
Toshiba Semiconductor and Storage
HN1A01FU-GR,LF
Toshiba Semiconductor and Storage
XC6SLX45T-3FGG484C
Xilinx Inc.
A54SX16A-1PQ208I
Microsemi Corporation
MPF100T-1FCG484E
Microsemi Corporation
LFE2-70E-5F900C
Lattice Semiconductor Corporation
EP3C5E144C8
Intel
XC7VX330T-2FFG1761C
Xilinx Inc.
M1AGL250V5-FG144I
Microsemi Corporation
5CEBA2F23C7N
Intel
EP1S40F780C5N
Intel
EP20K200EBC652-1X
Intel