Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / EMZ1DXV6T1G
Manufacturer Part Number | EMZ1DXV6T1G |
---|---|
Future Part Number | FT-EMZ1DXV6T1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
EMZ1DXV6T1G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN, PNP |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 500nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
Power - Max | 500mW |
Frequency - Transition | 180MHz, 140MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-563 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMZ1DXV6T1G Weight | Contact Us |
Replacement Part Number | EMZ1DXV6T1G-FT |
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