Manufacturer Part Number | EMX1T2R |
---|---|
Future Part Number | FT-EMX1T2R |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
EMX1T2R Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 NPN (Dual) |
Current - Collector (Ic) (Max) | 150mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
Power - Max | 150mW |
Frequency - Transition | 180MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | EMT6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMX1T2R Weight | Contact Us |
Replacement Part Number | EMX1T2R-FT |
2SC4207-Y(TE85L,F)
Toshiba Semiconductor and Storage
2SA1618-GR(TE85L,F
Toshiba Semiconductor and Storage
HN4A06J(TE85L,F)
Toshiba Semiconductor and Storage
HN1B04FU-GR,LF
Toshiba Semiconductor and Storage
HN1B04FU-Y,LF
Toshiba Semiconductor and Storage
HN1A01FU-GR,LF
Toshiba Semiconductor and Storage
HN1A01FU-Y,LF
Toshiba Semiconductor and Storage
HN1B01FU-GR,LF
Toshiba Semiconductor and Storage
HN1C01FU-GR,LF
Toshiba Semiconductor and Storage
HN1C03FU-A(TE85L,F
Toshiba Semiconductor and Storage
LFXP2-8E-7TN144C
Lattice Semiconductor Corporation
A54SX32A-1TQ144I
Microsemi Corporation
XC7S50-1FTGB196I
Xilinx Inc.
A3P600L-1FG256
Microsemi Corporation
10M16DAF256I7G
Intel
5SGSMD3E3H29I4N
Intel
A40MX04-1PL44I
Microsemi Corporation
LFX200EB-04F256C
Lattice Semiconductor Corporation
LFEC10E-3FN484I
Lattice Semiconductor Corporation
5CEBA5F23C7N
Intel