Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / EMG2DXV5T1
Manufacturer Part Number | EMG2DXV5T1 |
---|---|
Future Part Number | FT-EMG2DXV5T1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
EMG2DXV5T1 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 230mW |
Mounting Type | Surface Mount |
Package / Case | SOT-553 |
Supplier Device Package | SOT-553 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMG2DXV5T1 Weight | Contact Us |
Replacement Part Number | EMG2DXV5T1-FT |
NSVEMD4DXV6T5G
ON Semiconductor
NSBA123EDXV6T1G
ON Semiconductor
NSBC144EPDXV6T1G
ON Semiconductor
NSBA115EDXV6T1G
ON Semiconductor
NSBC123EDXV6T1G
ON Semiconductor
NSBA114EDXV6T1G
ON Semiconductor
NSBA124EDXV6T1G
ON Semiconductor
NSBC114EDXV6T1G
ON Semiconductor
NSBC114EPDXV6T1G
ON Semiconductor
NSBC114EDXV6T5G
ON Semiconductor
XC2S100-5PQ208I
Xilinx Inc.
M1AFS250-FG256
Microsemi Corporation
LFE5UM-45F-8BG381C
Lattice Semiconductor Corporation
5SGXEA5K3F40C4N
Intel
10CX150YF672I5G
Intel
5SGSMD6N1F45C2LN
Intel
XC4VLX100-12FF1148C
Xilinx Inc.
M7A3P1000-FGG144I
Microsemi Corporation
EPF10K50RC240-4
Intel
EP20K100QC208-3V
Intel