Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / EM 1BV1
Manufacturer Part Number | EM 1BV1 |
---|---|
Future Part Number | FT-EM 1BV1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
EM 1BV1 Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 800V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 1.05V @ 1A |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 20µA @ 800V |
Capacitance @ Vr, F | - |
Mounting Type | Through Hole |
Package / Case | Axial |
Supplier Device Package | - |
Operating Temperature - Junction | -40°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
EM 1BV1 Weight | Contact Us |
Replacement Part Number | EM 1BV1-FT |
SJPB-H6V
Sanken
SJPB-H9V
Sanken
SJPB-L4V
Sanken
SJPB-L6V
Sanken
SJPD-D5V
Sanken
SJPD-L5
Sanken
SJPD-L5V
Sanken
SJPE-H3V
Sanken
SJPE-H4V
Sanken
SJPE-H4VR
Sanken
XCV1000E-6FG900I
Xilinx Inc.
A54SX72A-PQG208
Microsemi Corporation
AGL250V2-VQG100I
Microsemi Corporation
EP4SGX290NF45C2
Intel
5SGXEB6R2F43I2LN
Intel
5SGSMD5H3F35C2N
Intel
LFE2M50SE-5FN484C
Lattice Semiconductor Corporation
LFE2M20SE-5F484C
Lattice Semiconductor Corporation
EP20K1000CB652C7
Intel
5SGSMD3H2F35I2LN
Intel