Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / EK 09W
Manufacturer Part Number | EK 09W |
---|---|
Future Part Number | FT-EK 09W |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
EK 09W Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 90V |
Current - Average Rectified (Io) | 700mA |
Voltage - Forward (Vf) (Max) @ If | 810mV @ 700mA |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 1mA @ 90V |
Capacitance @ Vr, F | - |
Mounting Type | Through Hole |
Package / Case | Axial |
Supplier Device Package | - |
Operating Temperature - Junction | -40°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
EK 09W Weight | Contact Us |
Replacement Part Number | EK 09W-FT |
CDBJSC51200-G
Comchip Technology
CDBJSC8650-G
Comchip Technology
CMF01(TE12L,Q,M)
Toshiba Semiconductor and Storage
CMF02(TE12L,Q,M)
Toshiba Semiconductor and Storage
CMF03(TE12L,Q,M)
Toshiba Semiconductor and Storage
CMG05(TE12L,Q,M)
Toshiba Semiconductor and Storage
CMG06(TE12L,Q,M)
Toshiba Semiconductor and Storage
CMG07(TE12L,Q,M)
Toshiba Semiconductor and Storage
CMH07(TE12L,Q,M)
Toshiba Semiconductor and Storage
CMS08(TE12L,Q,M)
Toshiba Semiconductor and Storage
A3P400-1FG484I
Microsemi Corporation
M1A3P1000-FGG256
Microsemi Corporation
10M50DCF256C7G
Intel
5SGXEA7N2F40C2N
Intel
EP3SE260H780I3
Intel
XC7V585T-1FF1761I
Xilinx Inc.
M1A3P1000L-1FGG144I
Microsemi Corporation
LFE2-20E-7FN256C
Lattice Semiconductor Corporation
EP3C25F324C6
Intel
5SGXEA3H1F35C2N
Intel