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Micron Technology Inc. EDB4432BBBJ-1DAAT-F-D

MFG Part Number
EDB4432BBBJ-1DAAT-F-D
Available Quantity
70940 Pieces
Reference Price
USD 10.60668
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Micron Technology Inc.
Brief Description
- IC DRAM 4G PARALLEL 533MHZ
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Memory
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
EDB4432BBBJ-1DAAT-F-D.pdf
EDB4432BBBJ-1DAAT-F-D Image

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EDB4432BBBJ-1DAAT-F-D Specifications

Manufacturer Part Number EDB4432BBBJ-1DAAT-F-D
Future Part Number FT-EDB4432BBBJ-1DAAT-F-D
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series -
EDB4432BBBJ-1DAAT-F-D Status (Lifecycle) In Stock
Part Status Active
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - Mobile LPDDR2
Memory Size 4Gb (128M x 32)
Clock Frequency 533MHz
Write Cycle Time - Word, Page -
Access Time -
Memory Interface Parallel
Voltage - Supply 1.14V ~ 1.95V
Operating Temperature -40°C ~ 105°C (TC)
Mounting Type -
Package / Case -
Supplier Device Package -
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
EDB4432BBBJ-1DAAT-F-D Weight Contact Us
Replacement Part Number EDB4432BBBJ-1DAAT-F-D-FT

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