Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / DXT5551P5-13
Manufacturer Part Number | DXT5551P5-13 |
---|---|
Future Part Number | FT-DXT5551P5-13 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DXT5551P5-13 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 600mA |
Voltage - Collector Emitter Breakdown (Max) | 160V |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Power - Max | 2.25W |
Frequency - Transition | 130MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerDI™ 5 |
Supplier Device Package | PowerDI™ 5 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DXT5551P5-13 Weight | Contact Us |
Replacement Part Number | DXT5551P5-13-FT |
MMST5551-7-F
Diodes Incorporated
AC847BWQ-7
Diodes Incorporated
MMST2907AQ-7
Diodes Incorporated
MMST3906-7-F
Diodes Incorporated
MMSTA05-7-F
Diodes Incorporated
BC846BW-7-F
Diodes Incorporated
2DB1694-7
Diodes Incorporated
MMSTA42-7-F
Diodes Incorporated
BC807-40W-7
Diodes Incorporated
BC848BW-7-F
Diodes Incorporated
A54SX32A-FTQ144
Microsemi Corporation
LCMXO2280E-3TN100I
Lattice Semiconductor Corporation
LCMXO1200E-4FT256C
Lattice Semiconductor Corporation
EP2AGZ300HF40I4N
Intel
EP3SE260H780C3N
Intel
5SGXEA4H1F35I2N
Intel
XC5VSX35T-2FF665I
Xilinx Inc.
M2GL060TS-1FGG676
Microsemi Corporation
LFE2-70E-6F672C
Lattice Semiconductor Corporation
LCMXO2-7000HE-5BG332I
Lattice Semiconductor Corporation