Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DTDG14GPT100
Manufacturer Part Number | DTDG14GPT100 |
---|---|
Future Part Number | FT-DTDG14GPT100 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DTDG14GPT100 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Resistor - Base (R1) | - |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 500mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 500mA |
Current - Collector Cutoff (Max) | 500nA (ICBO) |
Frequency - Transition | 80MHz |
Power - Max | 2W |
Mounting Type | Surface Mount |
Package / Case | TO-243AA |
Supplier Device Package | MPT3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DTDG14GPT100 Weight | Contact Us |
Replacement Part Number | DTDG14GPT100-FT |
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